Semiconductor Device Physics: Courselet 3. MOS Capacitors and MOS Transistors

Courselet Overview:
This is the third courselet in a 4-courselet series on Semiconductor Device Physics. In this courselet, we review the basic device structures and operating principles of MOS capacitors and MOS transistors. The behavior of MOS capacitors in equilibrium, accumulation, depletion, and inversion regions is examined. We examine the capacitance-voltage characteristics of MOS capacitors from accumulation region to depletion region and study the effect of interfacial oxide charges on the MOS capacitor C-V characteristics. Then, based on the basic physical principles of MOS capacitors, we derive the current-voltage (I-V) characteristics of MOS transistors under various operating conditions. We review the role of MOS technology scaling and the short channel effects on threshold voltage and leakage. Finally, we review the emerging MOS technologies for future semiconductor integrated circuits.

Who should take the courselet:
This courselet is taught at an introductory level does not require any special prerequisites other than knowledge of the materials covered in Courselet 1 of the 4-courselet series. Some familiarity with semiconductor materials and devices is helpful but not essential. The target audience includes:

• Undergraduate engineering and science students
• Process and equipment engineers interested in learning semiconductor device physics
• Individuals interested in learning about the basic principles and operation of semiconductor devices

Modules:

• Overview
• Module 1 - Metal-Oxide-Semiconductor (MOS) System
• Module 2 - MOS Capacitors: Capacitance-Voltage Chaaracteristics
• Module 3 - MOS Capacitors: Effects of Charges
• Module 4 - MOS Transistors: Current-Voltage Characteristics
• Module 5 - MOS Transistors: Scaling and Short-Channel Behavior
• Module 6 - MOS Transistors: Scaling and Short-Channel Behavior
• Module 7 - Future MOS Technologies